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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3000C16-8GSXKB 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs G Skill Intl F4-3000C16-8GSXKB 8GB

总分
star star star star star
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分
star star star star star
G Skill Intl F4-3000C16-8GSXKB 8GB

G Skill Intl F4-3000C16-8GSXKB 8GB

差异 规格 评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB 需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 19.7
    测试中的平均数值
G Skill Intl F4-3000C16-8GSXKB 8GB 需要考虑的原因
G Skill Intl F4-3000C16-8GSXKB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 96
    左右 -300% 更低的延时
  • 更快的写入速度，GB/s
    15.1 left arrow 1,336.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3000C16-8GSXKB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    96 left arrow 24
  • 读取速度，GB/s
    2,725.2 left arrow 19.7
  • 写入速度，GB/s
    1,336.0 left arrow 15.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    438 left arrow 3950

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较

takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB

G Skill Intl F4-3000C16-8GSXKB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-3733C17-16GTZKK 16GB
G Skill Intl F4-3733C17-16GTZKK 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3000C16-8GSXKB 8GB
G Skill Intl F4-3000C16-8GSXKB 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Corsair CM4X4GF2400C16N2 4GB
Corsair CM4X4GF2400C16N2 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BLS16G4D30AESE.M16FE 16GB
Crucial Technology BLS16G4D30AESE.M16FE 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
内存RAM
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
G Skill Intl F4-3200C14-16GTRG 16GB
G Skill Intl F4-3200C14-16GTRG 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston KF2666C16S4/16G 16GB
Kingston KF2666C16S4/16G 16GB
内存RAM
Samsung M471B5173BH0-CK0 4GB
Samsung M471B5173BH0-CK0 4GB
Crucial Technology BLM16G44C19U4B.M8FB1 16GB
Crucial Technology BLM16G44C19U4B.M8FB1 16GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Corsair CMW32GX4M4A2666C16 8GB
Corsair CMW32GX4M4A2666C16 8GB
内存RAM