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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3200C16-16GTZKO 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs G Skill Intl F4-3200C16-16GTZKO 16GB

总分
star star star star star
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分
star star star star star
G Skill Intl F4-3200C16-16GTZKO 16GB

G Skill Intl F4-3200C16-16GTZKO 16GB

差异 规格 评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB 需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.7
    测试中的平均数值
G Skill Intl F4-3200C16-16GTZKO 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GTZKO 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 96
    左右 -357% 更低的延时
  • 更快的写入速度，GB/s
    14.3 left arrow 1,336.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3200C16-16GTZKO 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    96 left arrow 21
  • 读取速度，GB/s
    2,725.2 left arrow 18.7
  • 写入速度，GB/s
    1,336.0 left arrow 14.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    438 left arrow 3437

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较

takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB

G Skill Intl F4-3200C16-16GTZKO 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3200C16-16GTZKO 16GB
G Skill Intl F4-3200C16-16GTZKO 16GB
内存RAM
SK Hynix HMT42GR7AFR4C-RD 16GB
SK Hynix HMT42GR7AFR4C-RD 16GB
G Skill Intl F4-3200C15-16GTZKO 16GB
G Skill Intl F4-3200C15-16GTZKO 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Teikon TMA851U6CJR6N-VKSC 4GB
Teikon TMA851U6CJR6N-VKSC 4GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
SK Hynix HMA41GR7AFR4N-TF 8GB
SK Hynix HMA41GR7AFR4N-TF 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3200C16-4GVKB 4GB
G Skill Intl F4-3200C16-4GVKB 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-2400C15-8GFXR 8GB
G Skill Intl F4-2400C15-8GFXR 8GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
Dust Leopard DDR4-2400 C17 8GB 8GB
Dust Leopard DDR4-2400 C17 8GB 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Corsair CMK32GX4M2L3000C15 16GB
Corsair CMK32GX4M2L3000C15 16GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMD16GX4M2C3333C16 8GB
Corsair CMD16GX4M2C3333C16 8GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
Transcend Information TS2GLH64V4B 16GB
Transcend Information TS2GLH64V4B 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-4000C18-8GTRG 8GB
G Skill Intl F4-4000C18-8GTRG 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
内存RAM