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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs InnoDisk Corporation M4U0-8GSSKCSJ 8GB

总分
star star star star star
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分
star star star star star
InnoDisk Corporation M4U0-8GSSKCSJ 8GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

差异 规格 评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB 需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16
    测试中的平均数值
InnoDisk Corporation M4U0-8GSSKCSJ 8GB 需要考虑的原因
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 96
    左右 -200% 更低的延时
  • 更快的写入速度，GB/s
    10.5 left arrow 1,336.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    96 left arrow 32
  • 读取速度，GB/s
    2,725.2 left arrow 16.0
  • 写入速度，GB/s
    1,336.0 left arrow 10.5
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    438 left arrow 2714

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较

takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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AMD R538G1601U2S 8GB
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Patriot Memory (PDP Systems) PSD416G21332S 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
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内存RAM
Kingston KVR533D2N4 512MB
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SK Hynix GKE800SO102408-2400 8GB
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内存RAM
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
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内存RAM
AMD R7416G2400U2S 16GB
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Corsair CM4X8GD3200C16K2E 8GB
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Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CB8GS2400.C8D 8GB
Crucial Technology CB8GS2400.C8D 8GB
内存RAM
Smart Modular SH564128FH8N0QHSCG 4GB
Smart Modular SH564128FH8N0QHSCG 4GB
Asgard VMA45UH-MEC1U2AW2 16GB
Asgard VMA45UH-MEC1U2AW2 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
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内存RAM
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SK Hynix HYMP512S64CP8-Y5 1GB
Kingston KHX2933C15D4/8GX 8GB
Kingston KHX2933C15D4/8GX 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
内存RAM
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SK Hynix HMT325S6CFR8C-PB 2GB
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Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3200C15-8GTZKY 8GB
G Skill Intl F4-3200C15-8GTZKY 8GB
内存RAM