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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
总分
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
差异
规格
评论
差异
需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
报告一个错误
低于PassMark测试中的延时,ns
18
96
左右 -433% 更低的延时
更快的读取速度,GB/s
20.4
2
测试中的平均数值
更快的写入速度,GB/s
18.1
1,336.0
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
96
18
读取速度,GB/s
2,725.2
20.4
写入速度,GB/s
1,336.0
18.1
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
438
3529
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
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Samsung M378B5273CH0-CH9 4GB
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A-DATA Technology ADOVE1A0834E 1GB
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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMD32GX4M4C3000C15 8GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMK8GX4M2B3866C18 4GB
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F4-3600C16-32GVK 32GB
报告一个错误
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