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Unifosa Corporation GU502203EP0201 1GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Unifosa Corporation GU502203EP0201 1GB vs OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

总分
star star star star star
Unifosa Corporation GU502203EP0201 1GB

Unifosa Corporation GU502203EP0201 1GB

总分
star star star star star
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

差异 规格 评论

差异

Unifosa Corporation GU502203EP0201 1GB 需要考虑的原因
Unifosa Corporation GU502203EP0201 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 27
    左右 7% 更低的延时
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB 需要考虑的原因
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.4 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation GU502203EP0201 1GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 27
  • 读取速度，GB/s
    12.6 left arrow 17.4
  • 写入速度，GB/s
    7.7 left arrow 14.5
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1381 left arrow 3692

Unifosa Corporation GU502203EP0201 1GB RAM的比较

AMD R334G1339U2S 4GB
Dust Leopard DDR4-2400 C16 8GB 8GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Unifosa Corporation GU502203EP0201 1GB
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OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
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