Unifosa Corporation GU502203EP0201 1GB vs OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

总分

Unifosa Corporation GU502203EP0201 1GB

Unifosa Corporation GU502203EP0201 1GB

总分

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

差异规格评论

差异

Unifosa Corporation GU502203EP0201 1GB

需要考虑的原因
Unifosa Corporation GU502203EP0201 1GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 7% 更低的延时

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

需要考虑的原因
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

报告一个错误

更快的读取速度，GB/s

17.4 12.6

测试中的平均数值
更快的写入速度，GB/s

14.5 7.7

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU502203EP0201 1GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 27
读取速度，GB/s

12.6 17.4
写入速度，GB/s

7.7 14.5
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1381 3692

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Unifosa Corporation GU502203EP0201 1GB

Unifosa Corporation GU502203EP0201 1GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology BLS8G4D240FSCK.8FBD 8GB

Crucial Technology BLS8G4D240FSCK.8FBD 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston KF3600C18D4/16GX 16GB

Kingston KF3600C18D4/16GX 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Corsair CMK64GX4M4K3733C17 16GB

Corsair CMK64GX4M4K3733C17 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Crucial Technology CT16G4DFD824A.M16FE 16GB

Crucial Technology CT16G4DFD824A.M16FE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KF3600C16D4/8GX 8GB

Kingston KF3600C16D4/8GX 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston 9965643-002.A01G 4GB

Kingston 9965643-002.A01G 4GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

A-DATA Technology AM2P24HC4R1-BUPS 4GB

A-DATA Technology AM2P24HC4R1-BUPS 4GB

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

Shenzen Recadata Storage Technology 8GB

Shenzen Recadata Storage Technology 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Mushkin MES4S213FF16G28 16GB

Mushkin MES4S213FF16G28 16GB