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Unifosa Corporation HU564404EP0200 4GB
G Skill Intl F4-2666C18-16GRS 16GB

Unifosa Corporation HU564404EP0200 4GB vs G Skill Intl F4-2666C18-16GRS 16GB

总分
star star star star star
Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

总分
star star star star star
G Skill Intl F4-2666C18-16GRS 16GB

G Skill Intl F4-2666C18-16GRS 16GB

差异 规格 评论

差异

Unifosa Corporation HU564404EP0200 4GB 需要考虑的原因
Unifosa Corporation HU564404EP0200 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 34
    左右 24% 更低的延时
G Skill Intl F4-2666C18-16GRS 16GB 需要考虑的原因
G Skill Intl F4-2666C18-16GRS 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.5 left arrow 14.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation HU564404EP0200 4GB
G Skill Intl F4-2666C18-16GRS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 34
  • 读取速度，GB/s
    14.1 left arrow 16.5
  • 写入速度，GB/s
    9.5 left arrow 13.5
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 11 13 15 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2354 left arrow 3199

Unifosa Corporation HU564404EP0200 4GB RAM的比较

Kingston KF556C40-16 16GB
Apacer Technology 76.D105G.D090B 16GB

G Skill Intl F4-2666C18-16GRS 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
G Skill Intl F4-2666C18-16GRS 16GB
G Skill Intl F4-2666C18-16GRS 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMU16GX4M2A2400C16 8GB
Corsair CMU16GX4M2A2400C16 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
SK Hynix MMA82GS6CJR8N-VK 16GB
SK Hynix MMA82GS6CJR8N-VK 16GB
内存RAM
Corsair CMT32GX5M2B5200C40 16GB
Corsair CMT32GX5M2B5200C40 16GB
G Skill Intl F4-3600C16-32GTZN 32GB
G Skill Intl F4-3600C16-32GTZN 32GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
内存RAM
Samsung M4 70T5663QZ3-CF7 2GB
Samsung M4 70T5663QZ3-CF7 2GB
SK Hynix HMA82GR8AMR4N-TF 16GB
SK Hynix HMA82GR8AMR4N-TF 16GB
内存RAM
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Corsair CMK64GX4M2C3200C16 32GB
Corsair CMK64GX4M2C3200C16 32GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMK64GX4M2C3200C16 32GB
Corsair CMK64GX4M2C3200C16 32GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
内存RAM