Unifosa Corporation HU564404EP0200 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Unifosa Corporation HU564404EP0200 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

总分
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Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

差异

  • 低于PassMark测试中的延时,ns
    26 left arrow 27
    左右 4% 更低的延时
  • 更快的读取速度,GB/s
    14.6 left arrow 14.1
    测试中的平均数值
  • 更快的写入速度,GB/s
    10.5 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽,mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation HU564404EP0200 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时,ns
    26 left arrow 27
  • 读取速度,GB/s
    14.1 left arrow 14.6
  • 写入速度,GB/s
    9.5 left arrow 10.5
  • 内存带宽,mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2354 left arrow 2409
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