Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs Corsair CMV8GX4M1A2666C18 8GB

总分

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

总分

Corsair CMV8GX4M1A2666C18 8GB

Corsair CMV8GX4M1A2666C18 8GB

差异规格评论

差异

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB

报告一个错误

Corsair CMV8GX4M1A2666C18 8GB

需要考虑的原因
Corsair CMV8GX4M1A2666C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 44

左右 -52% 更低的延时
更快的读取速度，GB/s

17.7 10.9

测试中的平均数值
更快的写入速度，GB/s

13.2 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Corsair CMV8GX4M1A2666C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 29
读取速度，GB/s

10.9 17.7
写入速度，GB/s

7.5 13.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1853 3304

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX4M4B3300C16 4GB

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Samsung M471B5173DB0-YK0 4GB

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Kingston 9965433-034.A00LF 4GB

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G Skill Intl F4-3200C16-16GTZKY 16GB

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Kingston KHX16LC9/8GX 8GB

Transcend Information AQD-SD4U4GN21-SG 4GB

Transcend Information AQD-SD4U4GN21-SG 4GB