Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs Crucial Technology CT32G4SFD8266.C16FE 32GB

总分

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

总分

Crucial Technology CT32G4SFD8266.C16FE 32GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

差异规格评论

差异

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB

报告一个错误

Crucial Technology CT32G4SFD8266.C16FE 32GB

需要考虑的原因
Crucial Technology CT32G4SFD8266.C16FE 32GB

报告一个错误

低于PassMark测试中的延时，ns

40 44

左右 -10% 更低的延时
更快的读取速度，GB/s

14.8 10.9

测试中的平均数值
更快的写入速度，GB/s

11.6 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 40
读取速度，GB/s

10.9 14.8
写入速度，GB/s

7.5 11.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1853 2786

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung DDR3 8GB 1600MHz 8GB

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AMD R748G2400U2S 8GB

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Crucial Technology CT16G4SFD832A.C16FP 16GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

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Mushkin 991586 2GB

Mushkin 991586 2GB

Kingston 9905713-008.A00G 4GB

Kingston 9905713-008.A00G 4GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Corsair CM4X8GF2400C16S4 8GB

Corsair CM4X8GF2400C16S4 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

SK Hynix HMA451U7MFR8N-TF 4GB

SK Hynix HMA451U7MFR8N-TF 4GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

Wilk Elektronik S.A. IRX3000D464L16/16G 16GB