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Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
比较
Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
总分
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
差异
规格
评论
差异
需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
报告一个错误
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
44
左右 -100% 更低的延时
更快的读取速度,GB/s
17.7
10.9
测试中的平均数值
更快的写入速度,GB/s
12.7
7.5
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
44
22
读取速度,GB/s
10.9
17.7
写入速度,GB/s
7.5
12.7
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1853
3075
Wilk Elektronik S.A. GR1333D364L9/4G 4GB RAM的比较
Ramaxel Technology RMR1870EC58E9F1333 4GB
Kingston ACR26D4U9S1KA-4 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM的比较
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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报告一个错误
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