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Wilk Elektronik S.A. GR1333D364L9/4G 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
比较
Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs SK Hynix V-GeN D4H4GL26A8TL 4GB
总分
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
总分
SK Hynix V-GeN D4H4GL26A8TL 4GB
差异
规格
评论
差异
需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
报告一个错误
低于PassMark测试中的延时,ns
44
68
左右 35% 更低的延时
需要考虑的原因
SK Hynix V-GeN D4H4GL26A8TL 4GB
报告一个错误
更快的读取速度,GB/s
16.2
10.9
测试中的平均数值
更快的写入速度,GB/s
8.1
7.5
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
44
68
读取速度,GB/s
10.9
16.2
写入速度,GB/s
7.5
8.1
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1853
1812
Wilk Elektronik S.A. GR1333D364L9/4G 4GB RAM的比较
Ramaxel Technology RMR1870EC58E9F1333 4GB
Kingston ACR26D4U9S1KA-4 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 99P5474-014.A00LF 4GB
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Wilk Elektronik S.A. GR1333D364L9/4G 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-2133C15-8GIS 8GB
Samsung M378B5273CH0-CH9 4GB
Kingston KHX1600C9D3/4GX 4GB
Kingston KVR533D2N4 512MB
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Crucial Technology CT51264BD160B.C16F 4GB
Kingston 9905678-065.A00G 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
Nanya Technology M2S4G64CB8HG5N-DI 4GB
Corsair CMK64GX4M4B3333C16 16GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK128GX4M8A2400C14 16GB
Kingston KHX1866C9D3/8GX 8GB
Kingston KCRXJ6-MIE 16GB
报告一个错误
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Bug description
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