Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Chun Well Technology Holding Limited D4U1636144B 16GB

总分

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

总分

Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

差异规格评论

差异

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 26

左右 4% 更低的延时

Chun Well Technology Holding Limited D4U1636144B 16GB

需要考虑的原因
Chun Well Technology Holding Limited D4U1636144B 16GB

报告一个错误

更快的读取速度，GB/s

23.7 12.6

测试中的平均数值
更快的写入速度，GB/s

18.3 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Chun Well Technology Holding Limited D4U1636144B 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 26
读取速度，GB/s

12.6 23.7
写入速度，GB/s

7.2 18.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2051 4124

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Crucial Technology CT16G4SFD8266.C16FE 16GB

Crucial Technology CT16G4SFD8266.C16FE 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Gloway International (HK) STK2133C15-8GB 8GB

Gloway International (HK) STK2133C15-8GB 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-3000C15-4GRK 4GB

G Skill Intl F4-3000C15-4GRK 4GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Samsung M391A1K43BB1-CRC 8GB

Samsung M391A1K43BB1-CRC 8GB

Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Kingston CBD24D4S7D8MB-16 16GB

Kingston CBD24D4S7D8MB-16 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

G Skill Intl F4-3600C16-8GTZSW 8GB

G Skill Intl F4-3600C16-8GTZSW 8GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Crucial Technology CT8G4DFD824A.C16FF 8GB

Crucial Technology CT8G4DFD824A.C16FF 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

G Skill Intl F4-2133C15-16GFT 16GB

G Skill Intl F4-2133C15-16GFT 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB