Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Kingston KF2666C13D4/8GX 8GB

总分

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

总分

Kingston KF2666C13D4/8GX 8GB

Kingston KF2666C13D4/8GX 8GB

差异规格评论

差异

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 7% 更低的延时

Kingston KF2666C13D4/8GX 8GB

需要考虑的原因
Kingston KF2666C13D4/8GX 8GB

报告一个错误

更快的读取速度，GB/s

16.7 12.6

测试中的平均数值
更快的写入速度，GB/s

14.1 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Kingston KF2666C13D4/8GX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 27
读取速度，GB/s

12.6 16.7
写入速度，GB/s

7.2 14.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2051 3342

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLT8G4D30AETA.K16FD 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Corsair CMK8GX4M2B4133C19 4GB

Corsair CMK8GX4M2B4133C19 4GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CM4B8G1L2666A18S4 8GB

Corsair CM4B8G1L2666A18S4 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB