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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
比较
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Netac Technology Co Ltd EKBLUE4162417AD 8GB
总分
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
总分
Netac Technology Co Ltd EKBLUE4162417AD 8GB
差异
规格
评论
差异
需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
报告一个错误
需要考虑的原因
Netac Technology Co Ltd EKBLUE4162417AD 8GB
报告一个错误
低于PassMark测试中的延时,ns
24
25
左右 -4% 更低的延时
更快的读取速度,GB/s
16.8
12.6
测试中的平均数值
更快的写入速度,GB/s
12.0
7.2
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
24
读取速度,GB/s
12.6
16.8
写入速度,GB/s
7.2
12.0
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2051
2946
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB RAM的比较
Team Group Inc. Xtreem-LV-2133 4GB
Kingston KHX1866C10S3L/8G 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB RAM的比较
Samsung M393B1K70CH0-CH9 8GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
Samsung M378B5773DH0-CH9 2GB
Apacer Technology GD2.1527WE.001 8GB
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Kingston KP4T2F-PSB 4GB
G Skill Intl F4-3200C14-16GTRS 16GB
SK Hynix HYMP512U64CP8-Y5 1GB
SpecTek Incorporated 16G2666CL19 16GB
A-DATA Technology DDR4 2400 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Samsung M471B5273EB0-CK0 4GB
Mushkin MR[ABC]4U360JNNM8G 8GB
报告一个错误
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