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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
比较
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
总分
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
差异
规格
评论
差异
需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
报告一个错误
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
报告一个错误
低于PassMark测试中的延时,ns
18
25
左右 -39% 更低的延时
更快的读取速度,GB/s
20.4
12.6
测试中的平均数值
更快的写入速度,GB/s
18.1
7.2
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
18
读取速度,GB/s
12.6
20.4
写入速度,GB/s
7.2
18.1
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2051
3529
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB RAM的比较
Team Group Inc. Xtreem-LV-2133 4GB
Kingston KHX1866C10S3L/8G 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology BLE4G3D1608DE1TX0. 4GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
报告一个错误
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Bug description
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