RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
选择RAM 1
选择RAM 2
比较
DDR3 RAM列表
所有内存模块,按延迟增加排序
№
带宽
延迟, ns
读取速度,GB/s
写入速度,GB/s
№
1241
RAM
Team Group Inc. Dark-2400 4GB
Latency
27
Read speed
17.5
Write speed
12.7
№
1242
RAM
Crucial Technology CT51264BA1339J.M8F 4GB
Latency
27
Read speed
11.4
Write speed
6.1
№
1243
RAM
G Skill Intl F3-10666CL7-2GBXH 2GB
Latency
27
Read speed
12.5
Write speed
8.6
№
1244
RAM
Kingston 99U5403-492.A00LF 8GB
Latency
27
Read speed
13.4
Write speed
7.8
№
1245
RAM
Kingston 9905584-002.A00LF 4GB
Latency
27
Read speed
14.0
Write speed
8.3
№
1246
RAM
Kingston 9905584-003.A00LF 4GB
Latency
27
Read speed
14.1
Write speed
8.1
№
1247
RAM
Corsair CM3B4G2C1600L11 4GB
Latency
27
Read speed
13.8
Write speed
8.8
№
1248
RAM
G Skill Intl F3-10666CL8-2GBRM 2GB
Latency
27
Read speed
11.4
Write speed
7.7
№
1249
RAM
Shanghai Kuxin Microelectronics Ltd NMUD380D81-1600C 8GB
Latency
27
Read speed
13.8
Write speed
9.8
№
1250
RAM
G Skill Intl F3-10666CL9-1GBNQ 1GB
Latency
27
Read speed
14.4
Write speed
7.9
№
1251
RAM
G Skill Intl F3-10666CL9-2GBNQ 2GB
Latency
27
Read speed
10.8
Write speed
7.0
№
1252
RAM
Hynix Semiconductor (Hyundai Electronics) HMT425U6AFR6C-PB 2GB
Latency
27
Read speed
14.0
Write speed
9.0
№
1253
RAM
Kingston 9905403-189.A01LF 4GB
Latency
27
Read speed
10.4
Write speed
6.4
№
1254
RAM
Samsung 9905458-026.A00LF 8GB
Latency
27
Read speed
15.0
Write speed
9.1
№
1255
RAM
Shenzhen Xingmem Technology Corp KRE-D3S1600M/8G 8GB
Latency
27
Read speed
13.3
Write speed
9.6
№
1256
RAM
Corsair CM3B8G2H1866K10S 8GB
Latency
27
Read speed
13.5
Write speed
10.5
№
1257
RAM
Hynix Semiconductor (Hyundai Electronics) HMT451B6AFR8A-PB 4GB
Latency
27
Read speed
11.3
Write speed
7.3
№
1258
RAM
Kingston KP223C-ELD 2GB
Latency
27
Read speed
13.4
Write speed
8.8
№
1259
RAM
Crucial Technology CT51264BF160B.D16F 4GB
Latency
27
Read speed
13.3
Write speed
9.9
№
1260
RAM
Team Group Inc. Team-Elite-1866 8GB
Latency
27
Read speed
13.5
Write speed
9.7
«
60
61
62
63
64
65
»
最新比较
Peak Electronics 256X64M-67E 2GB
Corsair CMW32GX4M2D3600C18 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMK16GX4M4B3200C15 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BLS8G4D240FSA.16FADG 8GB
Kingston 99U5429-007.A00LF 2GB
SK Hynix HMA81GS6AFR8N-VK 8GB
Kingston KHX2800C14D4/8GX 8GB
Kingston 9965589-008.D02G 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMV8GX4M1A2133C15 8GB
Qimonda 72T128420EFA3SB2 1GB
Kingston KF2666C16S4/16G 16GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMH16GX4M2D3600C18 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA451U6MFR8N-TF 4GB
Asgard VMA45UG-MEC1U2AW1 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Samsung M471B5173QH0-YK0 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMK32GX4M2L3200C16 16GB
报告一个错误
×
Bug description
Source link