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DDR2 RAM-Liste
Alle Speichermodule, sortiert nach steigender Latenz
№
Bandbreite
Latenzzeit, ns
Lesegeschwindigkeit, GB/s
Schreibgeschwindigkeit, GB/s
№
1801
RAM
Elpida EBE10UE8ACFA-6E-E 1GB
Latency
67
Read speed
3,849.2
Write speed
2,138.7
№
1802
RAM
SK Hynix HYMP151F72CP4D3-Y5 4GB
Latency
67
Read speed
2,863.8
Write speed
2,062.7
№
1803
RAM
SK Hynix HYMP151F72CPD43-S6 4GB
Latency
67
Read speed
3,322.5
Write speed
2,240.3
№
1804
RAM
Mushkin 991580ES996580ES 2GB
Latency
67
Read speed
2,630.5
Write speed
2,227.1
№
1805
RAM
Kingston 99U5316-024.A00LF 1GB
Latency
67
Read speed
3,125.8
Write speed
1,102.5
№
1806
RAM
ASint Technology B4BJ5SG3DN1 1GB
Latency
67
Read speed
1,292.9
Write speed
1,048.0
№
1807
RAM
Samsung 992RE04G800UV-FCDT 4GB
Latency
67
Read speed
4,680.9
Write speed
3,281.0
№
1808
RAM
Elpida EBE11UD8AGSA-6E-E 1GB
Latency
67
Read speed
2,433.4
Write speed
1,331.3
№
1809
RAM
ASint Technology BW9J2LB4FNG 2GB
Latency
67
Read speed
4,231.4
Write speed
2,641.2
№
1810
RAM
Kreton Corporation 535245521581350800 1GB
Latency
67
Read speed
2,213.9
Write speed
1,332.6
№
1811
RAM
V-Color Technology Inc. TN2G16C6-S6 2GB
Latency
67
Read speed
4,291.5
Write speed
2,795.5
№
1812
RAM
ASint Technology WLZ2128M8-JGG3B 2GB
Latency
67
Read speed
5,749.1
Write speed
4,286.2
№
1813
RAM
Mushkin 996558+ 2GB
Latency
67
Read speed
5,094.5
Write speed
3,649.0
№
1814
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Latency
67
Read speed
2,857.8
Write speed
1,273.3
№
1815
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564S64P6-C4 512MB
Latency
67
Read speed
1,761.2
Write speed
675.6
№
1816
RAM
A-DATA Technology ADOVE1B163B2G 2GB
Latency
67
Read speed
4,538.0
Write speed
1,866.0
№
1817
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564U64CP8-C4 512MB
Latency
67
Read speed
2,902.3
Write speed
1,280.8
№
1818
RAM
Nanya Technology M2N2GT64TU88D4Y-AC 2GB
Latency
67
Read speed
3,476.6
Write speed
1,209.6
№
1819
RAM
Micron Technology 8HTF6464HDY-53EB3 512MB
Latency
67
Read speed
2,306.4
Write speed
1,059.4
№
1820
RAM
Kingston 9905315-005.A01LF 512MB
Latency
67
Read speed
2,971.5
Write speed
1,349.1
«
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Letzte Vergleiche
PNY Electronics PNY 2GB
G Skill Intl F4-4133C19-8GTZRF 8GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Kingston 9905403-038.A00LF 4GB
Transcend Information TS2GSH64V1B 16GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-4800C19-8GTZRC 8GB
SK Hynix DDR2 800 2G 2GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A2K43CB1-CTD 16GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Samsung M378A2K43DB1-CTD 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4SFD8266.M16FH 16GB
Kingston 99U5469-045.A00LF 4GB
Kingston KMKYF9-MID 8GB
Team Group Inc. Team-Elite-1333 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
Samsung M393B2G70BH0-CH9 16GB
Neo Forza NMUD480E82-2666 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
G Skill Intl F4-2800C15-4GVRB 4GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
Kingston 9965525-140.A00LF 8GB
Samsung M474A4G43MB1-CTD 32GB
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