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DDR2 Elenco RAM

Tutti i moduli di memoria, ordinati in base alla latenza crescente

№
Larghezza di banda
Latenza, ns
Velocità di lettura, GB/s
Velocità di scrittura, GB/s
№
1801
RAM
Elpida EBE10UE8ACFA-6E-E 1GB Elpida EBE10UE8ACFA-6E-E 1GB
Latency
67
Read speed
3,849.2
Write speed
2,138.7
№
1802
RAM
SK Hynix HYMP151F72CP4D3-Y5 4GB SK Hynix HYMP151F72CP4D3-Y5 4GB
Latency
67
Read speed
2,863.8
Write speed
2,062.7
№
1803
RAM
SK Hynix HYMP151F72CPD43-S6 4GB SK Hynix HYMP151F72CPD43-S6 4GB
Latency
67
Read speed
3,322.5
Write speed
2,240.3
№
1804
RAM
Mushkin 991580ES996580ES 2GB Mushkin 991580ES996580ES 2GB
Latency
67
Read speed
2,630.5
Write speed
2,227.1
№
1805
RAM
Kingston 99U5316-024.A00LF 1GB Kingston 99U5316-024.A00LF 1GB
Latency
67
Read speed
3,125.8
Write speed
1,102.5
№
1806
RAM
ASint Technology B4BJ5SG3DN1 1GB ASint Technology B4BJ5SG3DN1 1GB
Latency
67
Read speed
1,292.9
Write speed
1,048.0
№
1807
RAM
Samsung 992RE04G800UV-FCDT 4GB Samsung 992RE04G800UV-FCDT 4GB
Latency
67
Read speed
4,680.9
Write speed
3,281.0
№
1808
RAM
Elpida EBE11UD8AGSA-6E-E 1GB Elpida EBE11UD8AGSA-6E-E 1GB
Latency
67
Read speed
2,433.4
Write speed
1,331.3
№
1809
RAM
ASint Technology BW9J2LB4FNG 2GB ASint Technology BW9J2LB4FNG 2GB
Latency
67
Read speed
4,231.4
Write speed
2,641.2
№
1810
RAM
Kreton Corporation 535245521581350800 1GB Kreton Corporation 535245521581350800 1GB
Latency
67
Read speed
2,213.9
Write speed
1,332.6
№
1811
RAM
V-Color Technology Inc. TN2G16C6-S6 2GB V-Color Technology Inc. TN2G16C6-S6 2GB
Latency
67
Read speed
4,291.5
Write speed
2,795.5
№
1812
RAM
ASint Technology WLZ2128M8-JGG3B 2GB ASint Technology WLZ2128M8-JGG3B 2GB
Latency
67
Read speed
5,749.1
Write speed
4,286.2
№
1813
RAM
Mushkin 996558+ 2GB Mushkin 996558+ 2GB
Latency
67
Read speed
5,094.5
Write speed
3,649.0
№
1814
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Latency
67
Read speed
2,857.8
Write speed
1,273.3
№
1815
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564S64P6-C4 512MB Hynix Semiconductor (Hyundai Electronics) HYMP564S64P6-C4 512MB
Latency
67
Read speed
1,761.2
Write speed
675.6
№
1816
RAM
A-DATA Technology ADOVE1B163B2G 2GB A-DATA Technology ADOVE1B163B2G 2GB
Latency
67
Read speed
4,538.0
Write speed
1,866.0
№
1817
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564U64CP8-C4 512MB Hynix Semiconductor (Hyundai Electronics) HYMP564U64CP8-C4 512MB
Latency
67
Read speed
2,902.3
Write speed
1,280.8
№
1818
RAM
Nanya Technology M2N2GT64TU88D4Y-AC 2GB Nanya Technology M2N2GT64TU88D4Y-AC 2GB
Latency
67
Read speed
3,476.6
Write speed
1,209.6
№
1819
RAM
Micron Technology 8HTF6464HDY-53EB3 512MB Micron Technology 8HTF6464HDY-53EB3 512MB
Latency
67
Read speed
2,306.4
Write speed
1,059.4
№
1820
RAM
Kingston 9905315-005.A01LF 512MB Kingston 9905315-005.A01LF 512MB
Latency
67
Read speed
2,971.5
Write speed
1,349.1


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G Skill Intl F4-4000C18-16GTRS 16GB
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Samsung M323R2GA3BB0-CQKOD 16GB
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