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DDR2 Список RAM
Все модули памяти, отсортированные по возрастанию задержки, Latency, ns
№
Пропусная способность
Задержка, нс
Скорость чтения, Гб/сек
Скорость записи, Гб/сек
№
1801
RAM
Elpida EBE10UE8ACFA-6E-E 1GB
Latency
67
Read speed
3,849.2
Write speed
2,138.7
№
1802
RAM
SK Hynix HYMP151F72CP4D3-Y5 4GB
Latency
67
Read speed
2,863.8
Write speed
2,062.7
№
1803
RAM
SK Hynix HYMP151F72CPD43-S6 4GB
Latency
67
Read speed
3,322.5
Write speed
2,240.3
№
1804
RAM
Mushkin 991580ES996580ES 2GB
Latency
67
Read speed
2,630.5
Write speed
2,227.1
№
1805
RAM
Kingston 99U5316-024.A00LF 1GB
Latency
67
Read speed
3,125.8
Write speed
1,102.5
№
1806
RAM
ASint Technology B4BJ5SG3DN1 1GB
Latency
67
Read speed
1,292.9
Write speed
1,048.0
№
1807
RAM
Samsung 992RE04G800UV-FCDT 4GB
Latency
67
Read speed
4,680.9
Write speed
3,281.0
№
1808
RAM
Elpida EBE11UD8AGSA-6E-E 1GB
Latency
67
Read speed
2,433.4
Write speed
1,331.3
№
1809
RAM
ASint Technology BW9J2LB4FNG 2GB
Latency
67
Read speed
4,231.4
Write speed
2,641.2
№
1810
RAM
Kreton Corporation 535245521581350800 1GB
Latency
67
Read speed
2,213.9
Write speed
1,332.6
№
1811
RAM
V-Color Technology Inc. TN2G16C6-S6 2GB
Latency
67
Read speed
4,291.5
Write speed
2,795.5
№
1812
RAM
ASint Technology WLZ2128M8-JGG3B 2GB
Latency
67
Read speed
5,749.1
Write speed
4,286.2
№
1813
RAM
Mushkin 996558+ 2GB
Latency
67
Read speed
5,094.5
Write speed
3,649.0
№
1814
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Latency
67
Read speed
2,857.8
Write speed
1,273.3
№
1815
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564S64P6-C4 512MB
Latency
67
Read speed
1,761.2
Write speed
675.6
№
1816
RAM
A-DATA Technology ADOVE1B163B2G 2GB
Latency
67
Read speed
4,538.0
Write speed
1,866.0
№
1817
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564U64CP8-C4 512MB
Latency
67
Read speed
2,902.3
Write speed
1,280.8
№
1818
RAM
Nanya Technology M2N2GT64TU88D4Y-AC 2GB
Latency
67
Read speed
3,476.6
Write speed
1,209.6
№
1819
RAM
Micron Technology 8HTF6464HDY-53EB3 512MB
Latency
67
Read speed
2,306.4
Write speed
1,059.4
№
1820
RAM
Kingston 9905315-005.A01LF 512MB
Latency
67
Read speed
2,971.5
Write speed
1,349.1
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Последние сравнения
SK Hynix HMT41GU7MFR8A-H9 8GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
Samsung M393B1G70QH0-YK0 8GB
Corsair CMT32GX4M4Z3200C16 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Gloway International (HK) STK4U2400D17082C 8GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-4000C18-8GTZKK 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Samsung M378A1G43DB0-CPB 8GB
Corsair CMK32GX4M4D3600C18 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3333C16-16GTZR 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3200C16-16GTZKY 16GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
Corsair CMV8GX4M1A2400C16 8GB
Corsair CMV8GX4M1A2400C16 8GB
Kingston 9905403-515.A00LF 8GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-2133C15-4GRB 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CMK16GX4M2D2400C14 8GB
Kingston 9965669-018.A00G 16GB
Corsair CM4B8G2J3000K15K 8GB
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