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DDR5
DDR4
DDR3
DDR2
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DDR2 Lista pamięci RAM
Wszystkie moduły pamięci, posortowane według rosnącego opóźnienia
№
Szerokość pasma
Opóźnienie, ns
Prędkość odczytu, GB/s
Prędkość zapisu, GB/s
№
1801
RAM
Elpida EBE10UE8ACFA-6E-E 1GB
Latency
67
Read speed
3,849.2
Write speed
2,138.7
№
1802
RAM
SK Hynix HYMP151F72CP4D3-Y5 4GB
Latency
67
Read speed
2,863.8
Write speed
2,062.7
№
1803
RAM
SK Hynix HYMP151F72CPD43-S6 4GB
Latency
67
Read speed
3,322.5
Write speed
2,240.3
№
1804
RAM
Mushkin 991580ES996580ES 2GB
Latency
67
Read speed
2,630.5
Write speed
2,227.1
№
1805
RAM
Kingston 99U5316-024.A00LF 1GB
Latency
67
Read speed
3,125.8
Write speed
1,102.5
№
1806
RAM
ASint Technology B4BJ5SG3DN1 1GB
Latency
67
Read speed
1,292.9
Write speed
1,048.0
№
1807
RAM
Samsung 992RE04G800UV-FCDT 4GB
Latency
67
Read speed
4,680.9
Write speed
3,281.0
№
1808
RAM
Elpida EBE11UD8AGSA-6E-E 1GB
Latency
67
Read speed
2,433.4
Write speed
1,331.3
№
1809
RAM
ASint Technology BW9J2LB4FNG 2GB
Latency
67
Read speed
4,231.4
Write speed
2,641.2
№
1810
RAM
Kreton Corporation 535245521581350800 1GB
Latency
67
Read speed
2,213.9
Write speed
1,332.6
№
1811
RAM
V-Color Technology Inc. TN2G16C6-S6 2GB
Latency
67
Read speed
4,291.5
Write speed
2,795.5
№
1812
RAM
ASint Technology WLZ2128M8-JGG3B 2GB
Latency
67
Read speed
5,749.1
Write speed
4,286.2
№
1813
RAM
Mushkin 996558+ 2GB
Latency
67
Read speed
5,094.5
Write speed
3,649.0
№
1814
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Latency
67
Read speed
2,857.8
Write speed
1,273.3
№
1815
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564S64P6-C4 512MB
Latency
67
Read speed
1,761.2
Write speed
675.6
№
1816
RAM
A-DATA Technology ADOVE1B163B2G 2GB
Latency
67
Read speed
4,538.0
Write speed
1,866.0
№
1817
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564U64CP8-C4 512MB
Latency
67
Read speed
2,902.3
Write speed
1,280.8
№
1818
RAM
Nanya Technology M2N2GT64TU88D4Y-AC 2GB
Latency
67
Read speed
3,476.6
Write speed
1,209.6
№
1819
RAM
Micron Technology 8HTF6464HDY-53EB3 512MB
Latency
67
Read speed
2,306.4
Write speed
1,059.4
№
1820
RAM
Kingston 9905315-005.A01LF 512MB
Latency
67
Read speed
2,971.5
Write speed
1,349.1
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Najnowsze porównania
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFS824A.C8FE 8GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-4000C17-16GTRSB 16GB
Kingston 9905403-444.A00LF 4GB
Corsair CM4X4GD3000C16K2 4GB
Kingston 99U5428-063.A00LF 8GB
Essencore Limited IM44GU48N24-FFFHAB 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Corsair CMG64GX4M2D3600C18 32GB
SpecTek Incorporated PSD34G13332 4GB
Samsung M471A1G44AB0-CWE 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3000C15-4GVR 4GB
Samsung M378B5173BH0-CH9 4GB
Kingston KHX2400C12D4/4GX 4GB
Samsung M395T2863QZ4-CF76 1GB
Samsung M471A1K43DB1-CWE 8GB
Crucial Technology CT51264BD160B.C16F 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-4000C19-8GTZ 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston 9905678-024.A00G 4GB
Kingston 9905403-174.A00LF 2GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
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