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Samsung M471B5173EB0-YK0 4GB
SK Hynix HMA82GU6DJR8N-WM 16GB
Compare
Samsung M471B5173EB0-YK0 4GB vs SK Hynix HMA82GU6DJR8N-WM 16GB
Overall score
Samsung M471B5173EB0-YK0 4GB
Overall score
SK Hynix HMA82GU6DJR8N-WM 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173EB0-YK0 4GB
Report a bug
Reasons to consider
SK Hynix HMA82GU6DJR8N-WM 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
44
Around -47% lower latency
Faster reading speed, GB/s
14.7
13
Average value in the tests
Faster write speed, GB/s
10.7
8.2
Average value in the tests
Higher memory bandwidth, mbps
23400
12800
Around 1.83 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173EB0-YK0 4GB
SK Hynix HMA82GU6DJR8N-WM 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
44
30
Read speed, GB/s
13.0
14.7
Write speed, GB/s
8.2
10.7
Memory bandwidth, mbps
12800
23400
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
9-9-9-24 / 1600 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)
2069
2935
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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