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Compara
DDR2 Lista de RAM
Todos los módulos de memoria, ordenados por latencia creciente
№
Ancho de banda
Latencia, ns
Velocidad de lectura, GB/s
Velocidad de escritura, GB/s
№
1721
RAM
takeMS International AG TMS2GB264D081805AW 2GB
Latency
66
Read speed
5,244.3
Write speed
3,636.4
№
1722
RAM
Kingmax Semiconductor KLDE88F-B8K16 2GB
Latency
66
Read speed
2,830.5
Write speed
1,524.5
№
1723
RAM
Micron Technology 16HTS51264HY-667A1 4GB
Latency
66
Read speed
4,043.0
Write speed
1,601.8
№
1724
RAM
Crucial Technology CT25664AA667.M16VF 2GB
Latency
66
Read speed
3,760.8
Write speed
1,721.7
№
1725
RAM
Samsung M395T2953CZ4-CE600 1GB
Latency
66
Read speed
2,152.3
Write speed
1,458.8
№
1726
RAM
takeMS International AG TMS2GS264D081805AW 2GB
Latency
66
Read speed
1,298.2
Write speed
970.7
№
1727
RAM
Crucial Technology CT25664AC667.C16FH 2GB
Latency
66
Read speed
3,325.9
Write speed
1,415.2
№
1728
RAM
Apacer Technology 78.01G9O.9K5 1GB
Latency
66
Read speed
2,976.9
Write speed
1,241.7
№
1729
RAM
Apacer Technology 78.01G9O.9LC 1GB
Latency
66
Read speed
3,449.1
Write speed
1,193.7
№
1730
RAM
takeMS – Ultron AG TMS2GB264D082805CQ 2GB
Latency
66
Read speed
5,113.2
Write speed
3,862.2
№
1731
RAM
Kingmax Semiconductor KSCE88F-B8MO5 2GB
Latency
66
Read speed
2,885.7
Write speed
1,167.9
№
1732
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB
Latency
66
Read speed
3,234.7
Write speed
1,433.1
№
1733
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125R72P4-E3 2GB
Latency
66
Read speed
2,629.9
Write speed
1,205.3
№
1734
RAM
Crucial Technology RM12864AA800.8FH 1GB
Latency
66
Read speed
4,666.7
Write speed
2,547.6
№
1735
RAM
Micron Technology 99P5471-013.A00DT 4GB
Latency
66
Read speed
5,231.4
Write speed
3,531.4
№
1736
RAM
Qimonda 72T512920EFA3SC2 4GB
Latency
66
Read speed
2,668.3
Write speed
1,730.7
№
1737
RAM
Transcend Information JM800QSU- 2GB
Latency
66
Read speed
2,192.4
Write speed
940.9
№
1738
RAM
MOVEKING ML081G66KL2046 1GB
Latency
66
Read speed
2,822.9
Write speed
1,053.8
№
1739
RAM
Crucial Technology wPSTTRegVHH 2GB
Latency
66
Read speed
2,720.9
Write speed
1,317.6
№
1740
RAM
Transcend Information TS128MLQ64V8U 1GB
Latency
66
Read speed
2,707.8
Write speed
1,598.0
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Últimas comparaciones
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Kingston KHX2400C11D3/4GX 4GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
SK Hynix HMT41GU6AFR8C-PB 8GB
Panram International Corporation W4U2133PS-8G 8GB
Kingston 2GB-DDR2 800Mhz 2GB
INTENSO 5641160 8GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
Samsung M393B2G70BH0-CH9 16GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Kingston 9905471-071.A00LF 8GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
G Skill Intl F4-4200C19-4GTZ 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CM4X16GE2666Z16K4 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9965669-032.A00G 16GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Kingston KP223C-ELD 2GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
SK Hynix HMT42GR7AFR4A-PB 16GB
G Skill Intl F4-2400C15-4GNT 4GB
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