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Сравнить
DDR2 Список RAM
Все модули памяти, отсортированные по возрастанию задержки, Latency, ns
№
Пропусная способность
Задержка, нс
Скорость чтения, Гб/сек
Скорость записи, Гб/сек
№
1721
RAM
takeMS International AG TMS2GB264D081805AW 2GB
Latency
66
Read speed
5,244.3
Write speed
3,636.4
№
1722
RAM
Kingmax Semiconductor KLDE88F-B8K16 2GB
Latency
66
Read speed
2,830.5
Write speed
1,524.5
№
1723
RAM
Micron Technology 16HTS51264HY-667A1 4GB
Latency
66
Read speed
4,043.0
Write speed
1,601.8
№
1724
RAM
Crucial Technology CT25664AA667.M16VF 2GB
Latency
66
Read speed
3,760.8
Write speed
1,721.7
№
1725
RAM
Samsung M395T2953CZ4-CE600 1GB
Latency
66
Read speed
2,152.3
Write speed
1,458.8
№
1726
RAM
takeMS International AG TMS2GS264D081805AW 2GB
Latency
66
Read speed
1,298.2
Write speed
970.7
№
1727
RAM
Crucial Technology CT25664AC667.C16FH 2GB
Latency
66
Read speed
3,325.9
Write speed
1,415.2
№
1728
RAM
Apacer Technology 78.01G9O.9K5 1GB
Latency
66
Read speed
2,976.9
Write speed
1,241.7
№
1729
RAM
Apacer Technology 78.01G9O.9LC 1GB
Latency
66
Read speed
3,449.1
Write speed
1,193.7
№
1730
RAM
takeMS – Ultron AG TMS2GB264D082805CQ 2GB
Latency
66
Read speed
5,113.2
Write speed
3,862.2
№
1731
RAM
Kingmax Semiconductor KSCE88F-B8MO5 2GB
Latency
66
Read speed
2,885.7
Write speed
1,167.9
№
1732
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB
Latency
66
Read speed
3,234.7
Write speed
1,433.1
№
1733
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125R72P4-E3 2GB
Latency
66
Read speed
2,629.9
Write speed
1,205.3
№
1734
RAM
Crucial Technology RM12864AA800.8FH 1GB
Latency
66
Read speed
4,666.7
Write speed
2,547.6
№
1735
RAM
Micron Technology 99P5471-013.A00DT 4GB
Latency
66
Read speed
5,231.4
Write speed
3,531.4
№
1736
RAM
Qimonda 72T512920EFA3SC2 4GB
Latency
66
Read speed
2,668.3
Write speed
1,730.7
№
1737
RAM
Transcend Information JM800QSU- 2GB
Latency
66
Read speed
2,192.4
Write speed
940.9
№
1738
RAM
MOVEKING ML081G66KL2046 1GB
Latency
66
Read speed
2,822.9
Write speed
1,053.8
№
1739
RAM
Crucial Technology wPSTTRegVHH 2GB
Latency
66
Read speed
2,720.9
Write speed
1,317.6
№
1740
RAM
Transcend Information TS128MLQ64V8U 1GB
Latency
66
Read speed
2,707.8
Write speed
1,598.0
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Последние сравнения
Samsung M378B5273CH0-CH9 4GB
Kingston ACR32D4U2S8HD-8X 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-2666C18-8GFT 8GB
Crucial Technology CT2K102464BD160B 8GB
Corsair CM4X8GE2666C16K4 8GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-2400C16-8GRSB 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
SK Hynix DDR2 800 2G 2GB
Kingston 9905678-156.A00G 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK16GX4M2C3200C16 8GB
Samsung M393B5170FH0-CH9 4GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
Samsung M386B4G70DM0-CMA4 32GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Qimonda 64T128020EDL2.5C2 1GB
Crucial Technology CT8G4DFS632A.M4FE 8GB
Kingston 99U5429-007.A00LF 2GB
Kingmax Semiconductor GSAH22F-18---------- 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Mushkin 99[2/7/4]183 8GB
Hexon Technology Pte Ltd HEXON 1GB
Apacer Technology D12.2755BS.001 16GB
Samsung M471B1G73DB0-YK0 8GB
Kingston HP37D4U1S8ME-16XR 16GB
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