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DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
1721
RAM
takeMS International AG TMS2GB264D081805AW 2GB
Latency
66
Read speed
5,244.3
Write speed
3,636.4
№
1722
RAM
Kingmax Semiconductor KLDE88F-B8K16 2GB
Latency
66
Read speed
2,830.5
Write speed
1,524.5
№
1723
RAM
Micron Technology 16HTS51264HY-667A1 4GB
Latency
66
Read speed
4,043.0
Write speed
1,601.8
№
1724
RAM
Crucial Technology CT25664AA667.M16VF 2GB
Latency
66
Read speed
3,760.8
Write speed
1,721.7
№
1725
RAM
Samsung M395T2953CZ4-CE600 1GB
Latency
66
Read speed
2,152.3
Write speed
1,458.8
№
1726
RAM
takeMS International AG TMS2GS264D081805AW 2GB
Latency
66
Read speed
1,298.2
Write speed
970.7
№
1727
RAM
Crucial Technology CT25664AC667.C16FH 2GB
Latency
66
Read speed
3,325.9
Write speed
1,415.2
№
1728
RAM
Apacer Technology 78.01G9O.9K5 1GB
Latency
66
Read speed
2,976.9
Write speed
1,241.7
№
1729
RAM
Apacer Technology 78.01G9O.9LC 1GB
Latency
66
Read speed
3,449.1
Write speed
1,193.7
№
1730
RAM
takeMS – Ultron AG TMS2GB264D082805CQ 2GB
Latency
66
Read speed
5,113.2
Write speed
3,862.2
№
1731
RAM
Kingmax Semiconductor KSCE88F-B8MO5 2GB
Latency
66
Read speed
2,885.7
Write speed
1,167.9
№
1732
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB
Latency
66
Read speed
3,234.7
Write speed
1,433.1
№
1733
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125R72P4-E3 2GB
Latency
66
Read speed
2,629.9
Write speed
1,205.3
№
1734
RAM
Crucial Technology RM12864AA800.8FH 1GB
Latency
66
Read speed
4,666.7
Write speed
2,547.6
№
1735
RAM
Micron Technology 99P5471-013.A00DT 4GB
Latency
66
Read speed
5,231.4
Write speed
3,531.4
№
1736
RAM
Qimonda 72T512920EFA3SC2 4GB
Latency
66
Read speed
2,668.3
Write speed
1,730.7
№
1737
RAM
Transcend Information JM800QSU- 2GB
Latency
66
Read speed
2,192.4
Write speed
940.9
№
1738
RAM
MOVEKING ML081G66KL2046 1GB
Latency
66
Read speed
2,822.9
Write speed
1,053.8
№
1739
RAM
Crucial Technology wPSTTRegVHH 2GB
Latency
66
Read speed
2,720.9
Write speed
1,317.6
№
1740
RAM
Transcend Information TS128MLQ64V8U 1GB
Latency
66
Read speed
2,707.8
Write speed
1,598.0
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Últimas comparações
SK Hynix HMT325S6CFR8C-PB 2GB
Kingston KF3200C16D4/32GX 32GB
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Corsair CM4B16G7L2666A16K2-O 16GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3200C16-8GTZRX 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Kingston 99U5471-056.A00LF 8GB
Apacer Technology 78.CAGPN.DF40B 8GB
AMD R538G1601U2S 8GB
Corsair CMSX32GX4M2A3000C16 16GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMD32GX4M4C3200C14M 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M391A2K43BB1-CTD 16GB
SK Hynix HYMP164U64CP6-Y5 512MB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMK32GX4M4E4133C19 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
DSL Memory CIR-W4SUSS2408G 8GB
Corsair CMY8GX3M2A2666C10 4GB
Essencore Limited KD48GS88J-26N1900 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
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