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比较
DDR2 RAM列表
所有内存模块，按延迟增加排序
№
带宽
延迟, ns
读取速度，GB/s
写入速度，GB/s
№
1721
RAM
takeMS International AG TMS2GB264D081805AW 2GB
Latency
66
Read speed
5,244.3
Write speed
3,636.4
№
1722
RAM
Kingmax Semiconductor KLDE88F-B8K16 2GB
Latency
66
Read speed
2,830.5
Write speed
1,524.5
№
1723
RAM
Micron Technology 16HTS51264HY-667A1 4GB
Latency
66
Read speed
4,043.0
Write speed
1,601.8
№
1724
RAM
Crucial Technology CT25664AA667.M16VF 2GB
Latency
66
Read speed
3,760.8
Write speed
1,721.7
№
1725
RAM
Samsung M395T2953CZ4-CE600 1GB
Latency
66
Read speed
2,152.3
Write speed
1,458.8
№
1726
RAM
takeMS International AG TMS2GS264D081805AW 2GB
Latency
66
Read speed
1,298.2
Write speed
970.7
№
1727
RAM
Crucial Technology CT25664AC667.C16FH 2GB
Latency
66
Read speed
3,325.9
Write speed
1,415.2
№
1728
RAM
Apacer Technology 78.01G9O.9K5 1GB
Latency
66
Read speed
2,976.9
Write speed
1,241.7
№
1729
RAM
Apacer Technology 78.01G9O.9LC 1GB
Latency
66
Read speed
3,449.1
Write speed
1,193.7
№
1730
RAM
takeMS – Ultron AG TMS2GB264D082805CQ 2GB
Latency
66
Read speed
5,113.2
Write speed
3,862.2
№
1731
RAM
Kingmax Semiconductor KSCE88F-B8MO5 2GB
Latency
66
Read speed
2,885.7
Write speed
1,167.9
№
1732
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB
Latency
66
Read speed
3,234.7
Write speed
1,433.1
№
1733
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125R72P4-E3 2GB
Latency
66
Read speed
2,629.9
Write speed
1,205.3
№
1734
RAM
Crucial Technology RM12864AA800.8FH 1GB
Latency
66
Read speed
4,666.7
Write speed
2,547.6
№
1735
RAM
Micron Technology 99P5471-013.A00DT 4GB
Latency
66
Read speed
5,231.4
Write speed
3,531.4
№
1736
RAM
Qimonda 72T512920EFA3SC2 4GB
Latency
66
Read speed
2,668.3
Write speed
1,730.7
№
1737
RAM
Transcend Information JM800QSU- 2GB
Latency
66
Read speed
2,192.4
Write speed
940.9
№
1738
RAM
MOVEKING ML081G66KL2046 1GB
Latency
66
Read speed
2,822.9
Write speed
1,053.8
№
1739
RAM
Crucial Technology wPSTTRegVHH 2GB
Latency
66
Read speed
2,720.9
Write speed
1,317.6
№
1740
RAM
Transcend Information TS128MLQ64V8U 1GB
Latency
66
Read speed
2,707.8
Write speed
1,598.0
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最新比较
SK Hynix HYMP164U64CP6-Y5 512MB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT4G4DFS8213.M8FA 4GB
Hexon Technology Pte Ltd HEXON 1GB
Panram International Corporation PUD43000C158G2NJK 8GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
Corsair CML16GX3M2A1600C10 8GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
Kingston 99U5474-038.A00LF 4GB
Samsung M471A2K43CB1-CRCR 16GB
Kingston 9905403-011.A03LF 2GB
JUHOR JHD2666U1908JG 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
Swissbit MEU25664D6BC2EP-30 2GB
Corsair CMD32GX4M2C3200C14T 16GB
SK Hynix DDR2 800 2G 2GB
Kingston 9905598-028.A00G 8GB
Kingston 99P5471-043.A00LF 8GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
Samsung M471B5273CH0-CH9 4GB
Avant Technology W641GU67J7240N8 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMSO16GX4M2A2133C15 8GB
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