RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Sélectionner RAM 1
Sélectionner RAM 2
Comparez
DDR2 Liste de RAM
Tous les modules de mémoire, triés par latence croissante.
№
Bande passante
Latency, ns
Vitesse de lecture, GB/s
Vitesse d'écriture, GB/s
№
1121
RAM
Kingston 9905295-0 2GB
Latency
57
Read speed
3,882.5
Write speed
1,438.4
№
1122
RAM
MDT Technologies GmbH MDT 1GB DDR2-66 1GB
Latency
57
Read speed
4,016.9
Write speed
1,804.5
№
1123
RAM
Avexir Technologies Corporation AVD2U08000502G-2B 2GB
Latency
57
Read speed
4,907.4
Write speed
3,674.6
№
1124
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564B
Latency
57
Read speed
2,766.3
Write speed
1,937.1
№
1125
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564F72BP8D2-Y5 512MB
Latency
57
Read speed
2,837.2
Write speed
1,863.2
№
1126
RAM
Samsung M3 78T2953GZ3-CF7 1GB
Latency
57
Read speed
3,779.2
Write speed
1,956.1
№
1127
RAM
Kingston 9905295-038.B00LF 1GB
Latency
57
Read speed
2,690.2
Write speed
1,370.1
№
1128
RAM
Samsung M3 78T5663QZ3-CE7 2GB
Latency
57
Read speed
4,746.6
Write speed
2,183.1
№
1129
RAM
Centon Electronics MICT38UFA 2GB 2GB
Latency
57
Read speed
4,161.2
Write speed
1,783.2
№
1130
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564U64P8-E3 512MB
Latency
57
Read speed
3,267.6
Write speed
1,315.6
№
1131
RAM
Samsung M3 78T6464QZ3-CE6 512MB
Latency
57
Read speed
3,336.7
Write speed
1,780.2
№
1132
RAM
Hynix Semiconductor (Hyundai Electronics) L57 11/2010 LOGIN 2GB
Latency
57
Read speed
3,980.1
Write speed
1,551.1
№
1133
RAM
Hynix Semiconductor (Hyundai Electronics) L105 11/10 BITWAY 2GB
Latency
57
Read speed
4,073.8
Write speed
1,702.7
№
1134
RAM
Micron Technology 8HTF12864AY-800G1 1GB
Latency
58
Read speed
4,205.5
Write speed
2,049.0
№
1135
RAM
A-DATA Technology DOVF1B163BE 2GB
Latency
58
Read speed
4,144.4
Write speed
1,818.6
№
1136
RAM
Infineon (Siemens) 64T32000HDL3.7A 256MB
Latency
58
Read speed
2,474.2
Write speed
1,233.9
№
1137
RAM
Patriot Memory (PDP Systems) PSD251280081 512MB
Latency
58
Read speed
4,210.5
Write speed
1,729.7
№
1138
RAM
A-DATA Technology DQVE1A08 1GB
Latency
58
Read speed
3,742.4
Write speed
1,651.5
№
1139
RAM
Corsair CM2X2048-8500C5 2GB
Latency
58
Read speed
5,382.3
Write speed
3,338.9
№
1140
RAM
Positivo Informatica Ltd 78.0GA0.9LL 1GB
Latency
58
Read speed
3,777.1
Write speed
1,353.4
«
54
55
56
57
58
59
»
Dernières comparaisons
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
Kingston 9905403-156.A00LF 2GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-4000C16-16GVK 16GB
AMD AE34G1601U1 4GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
SK Hynix GKE800SO51208-2133AH 8GB
Corsair CMK32GX5M2B5200C40 16GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Smart Modular SMS4TDC3C0K0446SCG 4GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-2133C15-8GVR 8GB
Samsung M378B5273CH0-CH9 4GB
Corsair CM4X4GD3000C16K2 4GB
Kingston 99U5428-046.A00LF 4GB
G Skill Intl F4-4400C17-16GTZR 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Maxsun MSD48G30Q3 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Micron Technology 18HTF12872AY-800F1 1GB
DSL Memory D4SS1G082SH21A-B 16GB
Samsung M392B1G73BH0-YK0 8GB
Samsung M392B1K70CM0-YH9 8GB
Signaler un bogue
×
Bug description
Source link