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Сравнить
DDR2 Список RAM
Все модули памяти, отсортированные по возрастанию задержки, Latency, ns
№
Пропусная способность
Задержка, нс
Скорость чтения, Гб/сек
Скорость записи, Гб/сек
№
1121
RAM
Kingston 9905295-0 2GB
Latency
57
Read speed
3,882.5
Write speed
1,438.4
№
1122
RAM
MDT Technologies GmbH MDT 1GB DDR2-66 1GB
Latency
57
Read speed
4,016.9
Write speed
1,804.5
№
1123
RAM
Avexir Technologies Corporation AVD2U08000502G-2B 2GB
Latency
57
Read speed
4,907.4
Write speed
3,674.6
№
1124
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564B
Latency
57
Read speed
2,766.3
Write speed
1,937.1
№
1125
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564F72BP8D2-Y5 512MB
Latency
57
Read speed
2,837.2
Write speed
1,863.2
№
1126
RAM
Samsung M3 78T2953GZ3-CF7 1GB
Latency
57
Read speed
3,779.2
Write speed
1,956.1
№
1127
RAM
Kingston 9905295-038.B00LF 1GB
Latency
57
Read speed
2,690.2
Write speed
1,370.1
№
1128
RAM
Samsung M3 78T5663QZ3-CE7 2GB
Latency
57
Read speed
4,746.6
Write speed
2,183.1
№
1129
RAM
Centon Electronics MICT38UFA 2GB 2GB
Latency
57
Read speed
4,161.2
Write speed
1,783.2
№
1130
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564U64P8-E3 512MB
Latency
57
Read speed
3,267.6
Write speed
1,315.6
№
1131
RAM
Samsung M3 78T6464QZ3-CE6 512MB
Latency
57
Read speed
3,336.7
Write speed
1,780.2
№
1132
RAM
Hynix Semiconductor (Hyundai Electronics) L57 11/2010 LOGIN 2GB
Latency
57
Read speed
3,980.1
Write speed
1,551.1
№
1133
RAM
Hynix Semiconductor (Hyundai Electronics) L105 11/10 BITWAY 2GB
Latency
57
Read speed
4,073.8
Write speed
1,702.7
№
1134
RAM
Micron Technology 8HTF12864AY-800G1 1GB
Latency
58
Read speed
4,205.5
Write speed
2,049.0
№
1135
RAM
A-DATA Technology DOVF1B163BE 2GB
Latency
58
Read speed
4,144.4
Write speed
1,818.6
№
1136
RAM
Infineon (Siemens) 64T32000HDL3.7A 256MB
Latency
58
Read speed
2,474.2
Write speed
1,233.9
№
1137
RAM
Patriot Memory (PDP Systems) PSD251280081 512MB
Latency
58
Read speed
4,210.5
Write speed
1,729.7
№
1138
RAM
A-DATA Technology DQVE1A08 1GB
Latency
58
Read speed
3,742.4
Write speed
1,651.5
№
1139
RAM
Corsair CM2X2048-8500C5 2GB
Latency
58
Read speed
5,382.3
Write speed
3,338.9
№
1140
RAM
Positivo Informatica Ltd 78.0GA0.9LL 1GB
Latency
58
Read speed
3,777.1
Write speed
1,353.4
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Последние сравнения
G Skill Intl F3-12800CL7-4GBXM 4GB
Samsung M393A1G43EB1-CRC 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Gloway International (HK) STK4U2400D17041C 4GB
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
G Skill Intl F3-1866C8-8GTX 8GB
SK Hynix HMA851S6DJR6N-XN 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Apacer Technology 78.C2GFP.C700B 8GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
Kingston KHX1866C9D3/8GX 8GB
Kingston KF2666C13D4/8GX 8GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMU32GX4M4C3466C16 8GB
Kingston 99U5474-010.A00LF 2GB
Kingston KWTHG4-MIE 16GB
Kingston 99U5403-050.A00LF 4GB
G Skill Intl F4-3200C16-8GVR 8GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3733C17-16GTZSW 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CM4X16GE2400C14K4 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston HX426C16FB2/8-SP 8GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2133C15-8GIS 8GB
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