RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
选择RAM 1
选择RAM 2
比较
DDR2 RAM列表
所有内存模块，按延迟增加排序
№
带宽
延迟, ns
读取速度，GB/s
写入速度，GB/s
№
1121
RAM
Kingston 9905295-0 2GB
Latency
57
Read speed
3,882.5
Write speed
1,438.4
№
1122
RAM
MDT Technologies GmbH MDT 1GB DDR2-66 1GB
Latency
57
Read speed
4,016.9
Write speed
1,804.5
№
1123
RAM
Avexir Technologies Corporation AVD2U08000502G-2B 2GB
Latency
57
Read speed
4,907.4
Write speed
3,674.6
№
1124
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564B
Latency
57
Read speed
2,766.3
Write speed
1,937.1
№
1125
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564F72BP8D2-Y5 512MB
Latency
57
Read speed
2,837.2
Write speed
1,863.2
№
1126
RAM
Samsung M3 78T2953GZ3-CF7 1GB
Latency
57
Read speed
3,779.2
Write speed
1,956.1
№
1127
RAM
Kingston 9905295-038.B00LF 1GB
Latency
57
Read speed
2,690.2
Write speed
1,370.1
№
1128
RAM
Samsung M3 78T5663QZ3-CE7 2GB
Latency
57
Read speed
4,746.6
Write speed
2,183.1
№
1129
RAM
Centon Electronics MICT38UFA 2GB 2GB
Latency
57
Read speed
4,161.2
Write speed
1,783.2
№
1130
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564U64P8-E3 512MB
Latency
57
Read speed
3,267.6
Write speed
1,315.6
№
1131
RAM
Samsung M3 78T6464QZ3-CE6 512MB
Latency
57
Read speed
3,336.7
Write speed
1,780.2
№
1132
RAM
Hynix Semiconductor (Hyundai Electronics) L57 11/2010 LOGIN 2GB
Latency
57
Read speed
3,980.1
Write speed
1,551.1
№
1133
RAM
Hynix Semiconductor (Hyundai Electronics) L105 11/10 BITWAY 2GB
Latency
57
Read speed
4,073.8
Write speed
1,702.7
№
1134
RAM
Micron Technology 8HTF12864AY-800G1 1GB
Latency
58
Read speed
4,205.5
Write speed
2,049.0
№
1135
RAM
A-DATA Technology DOVF1B163BE 2GB
Latency
58
Read speed
4,144.4
Write speed
1,818.6
№
1136
RAM
Infineon (Siemens) 64T32000HDL3.7A 256MB
Latency
58
Read speed
2,474.2
Write speed
1,233.9
№
1137
RAM
Patriot Memory (PDP Systems) PSD251280081 512MB
Latency
58
Read speed
4,210.5
Write speed
1,729.7
№
1138
RAM
A-DATA Technology DQVE1A08 1GB
Latency
58
Read speed
3,742.4
Write speed
1,651.5
№
1139
RAM
Corsair CM2X2048-8500C5 2GB
Latency
58
Read speed
5,382.3
Write speed
3,338.9
№
1140
RAM
Positivo Informatica Ltd 78.0GA0.9LL 1GB
Latency
58
Read speed
3,777.1
Write speed
1,353.4
«
54
55
56
57
58
59
»
最新比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-2400C15-8GFT 8GB
Samsung M471B5273DH0-CK0 4GB
Corsair CMR32GX4M2D3000C16 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
G Skill Intl F4-2400C17-16GIS 16GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9905713-008.A00G 4GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology CT16G4DFD832A.C16FP 16GB
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMK8GX4M2A2666C16 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston HX426C16FB2/8-SP 8GB
A-DATA Technology DQKD1A08 1GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C17-16GIS 16GB
Hexon Technology Pte Ltd HEXON 1GB
Apacer Technology 76.C102G.D170B 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB
Crucial Technology CT51264BD1339.M16F 4GB
V-Color Technology Inc. TC416G24D817 16GB
Samsung M393B2G70BH0-CH9 16GB
SK Hynix HMA451U7AFR8N-TF 4GB
SK Hynix HMT31GR7BFR4C-H9 8GB
Corsair CMWX16GC3600C18W2D 16GB
报告一个错误
×
Bug description
Source link
Русский 
English 
Español 
Português 
Deutsch 
Français 
Italiano 
Polski 
日本語 
