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DDR2 Lista pamięci RAM
Wszystkie moduły pamięci, posortowane według rosnącego opóźnienia
№
Szerokość pasma
Opóźnienie, ns
Prędkość odczytu, GB/s
Prędkość zapisu, GB/s
№
1121
RAM
Kingston 9905295-0 2GB
Latency
57
Read speed
3,882.5
Write speed
1,438.4
№
1122
RAM
MDT Technologies GmbH MDT 1GB DDR2-66 1GB
Latency
57
Read speed
4,016.9
Write speed
1,804.5
№
1123
RAM
Avexir Technologies Corporation AVD2U08000502G-2B 2GB
Latency
57
Read speed
4,907.4
Write speed
3,674.6
№
1124
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564B
Latency
57
Read speed
2,766.3
Write speed
1,937.1
№
1125
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564F72BP8D2-Y5 512MB
Latency
57
Read speed
2,837.2
Write speed
1,863.2
№
1126
RAM
Samsung M3 78T2953GZ3-CF7 1GB
Latency
57
Read speed
3,779.2
Write speed
1,956.1
№
1127
RAM
Kingston 9905295-038.B00LF 1GB
Latency
57
Read speed
2,690.2
Write speed
1,370.1
№
1128
RAM
Samsung M3 78T5663QZ3-CE7 2GB
Latency
57
Read speed
4,746.6
Write speed
2,183.1
№
1129
RAM
Centon Electronics MICT38UFA 2GB 2GB
Latency
57
Read speed
4,161.2
Write speed
1,783.2
№
1130
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564U64P8-E3 512MB
Latency
57
Read speed
3,267.6
Write speed
1,315.6
№
1131
RAM
Samsung M3 78T6464QZ3-CE6 512MB
Latency
57
Read speed
3,336.7
Write speed
1,780.2
№
1132
RAM
Hynix Semiconductor (Hyundai Electronics) L57 11/2010 LOGIN 2GB
Latency
57
Read speed
3,980.1
Write speed
1,551.1
№
1133
RAM
Hynix Semiconductor (Hyundai Electronics) L105 11/10 BITWAY 2GB
Latency
57
Read speed
4,073.8
Write speed
1,702.7
№
1134
RAM
Micron Technology 8HTF12864AY-800G1 1GB
Latency
58
Read speed
4,205.5
Write speed
2,049.0
№
1135
RAM
A-DATA Technology DOVF1B163BE 2GB
Latency
58
Read speed
4,144.4
Write speed
1,818.6
№
1136
RAM
Infineon (Siemens) 64T32000HDL3.7A 256MB
Latency
58
Read speed
2,474.2
Write speed
1,233.9
№
1137
RAM
Patriot Memory (PDP Systems) PSD251280081 512MB
Latency
58
Read speed
4,210.5
Write speed
1,729.7
№
1138
RAM
A-DATA Technology DQVE1A08 1GB
Latency
58
Read speed
3,742.4
Write speed
1,651.5
№
1139
RAM
Corsair CM2X2048-8500C5 2GB
Latency
58
Read speed
5,382.3
Write speed
3,338.9
№
1140
RAM
Positivo Informatica Ltd 78.0GA0.9LL 1GB
Latency
58
Read speed
3,777.1
Write speed
1,353.4
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Najnowsze porównania
Kingston KVR800D2N6/2G 2GB
Crucial Technology BL16G30C15U4B.M16FE1 16GB
Kingston 99U5403-050.A00LF 4GB
G Skill Intl F4-3200C16-8GVR 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Samsung M3 93T5750CZA-CE6 2GB
Samsung M378A1G44AB0-CWE 8GB
Kingston 99U5428-046.A00LF 4GB
Crucial Technology BL16G32C16U4BL.M16FE 16GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-2133C15-4GVK 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
Kingston 9965525-018.A00LF 4GB
Kingston 9965596-031.B00G 8GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Transcend Information JM3200HLB-8G 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CMK16GX4M2C3000C16 8GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA81GU6CJR8N-XN 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD16GX4M4A2666C16 4GB
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