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Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB
Kingston XRGM6C-MIE 16GB

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB vs Kingston XRGM6C-MIE 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

总分
star star star star star
Kingston XRGM6C-MIE 16GB

Kingston XRGM6C-MIE 16GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 32
    左右 3% 更低的延时
Kingston XRGM6C-MIE 16GB 需要考虑的原因
Kingston XRGM6C-MIE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.5 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 6.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB
Kingston XRGM6C-MIE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 32
  • 读取速度，GB/s
    10.5 left arrow 16.5
  • 写入速度，GB/s
    6.6 left arrow 13.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1669 left arrow 3347

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB RAM的比较

Ramaxel Technology RMT3160ED58E9W1600 4GB

Kingston XRGM6C-MIE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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