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Ramaxel Technology RMT3160ED58E9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

Ramaxel Technology RMT3160ED58E9W1600 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

总分
star star star star star
Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

差异 规格 评论

差异

Ramaxel Technology RMT3160ED58E9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3160ED58E9W1600 4GB
报告一个错误
  • 更快的读取速度，GB/s
    12.3 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.8 left arrow 6.6
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 40
    左右 -29% 更低的延时

规格

完整的技术规格清单
Ramaxel Technology RMT3160ED58E9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    40 left arrow 31
  • 读取速度，GB/s
    12.3 left arrow 10.5
  • 写入速度，GB/s
    7.8 left arrow 6.6
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1806 left arrow 1669

Ramaxel Technology RMT3160ED58E9W1600 4GB RAM的比较

AMD R538G1601S2LS 8GB
Kingston 9905678-023.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB RAM的比较

Kingston XRGM6C-MIE 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A
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