RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology VDQVE1B16 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Compare
A-DATA Technology VDQVE1B16 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Overall score
A-DATA Technology VDQVE1B16 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology VDQVE1B16 2GB
Report a bug
Faster reading speed, GB/s
4
14.2
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
46
Around -84% lower latency
Faster write speed, GB/s
7.4
2,061.2
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology VDQVE1B16 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
25
Read speed, GB/s
4,937.3
14.2
Write speed, GB/s
2,061.2
7.4
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
759
2104
A-DATA Technology VDQVE1B16 2GB RAM comparisons
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB RAM comparisons
Samsung M393B1K70QB0-CK0 8GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology VDQVE1B16 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Kingston HX318C10FK/4 4GB
V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB
Kingston 99U5474-022.A00LF 2GB
Kingston KHX3466C16D4/16GX 16GB
Kingston 9905471-001.A01LF 2GB
Kingston ACR21D4S15HAG/8G 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Kingston 9965604-008.D00G 16GB
Samsung M393B2G70BH0-CH9 16GB
Team Group Inc. Team-Elite-2400 4GB
Samsung M378B5273DH0-CH9 4GB
Kingston 9905668-001.A00G 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Kingston ACR26D4S9S1KA-4 4GB
Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology HMA81GU6AFR8N-UH 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M471A4G43BB1-CWE 32GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston X5H5PW-MIB 8GB
A-DATA Technology DDR3 1600 4GB
Gloway International (HK) STK4U2400D15082C 8GB
Report a bug
×
Bug description
Source link