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Corsair CMX4GX3M1A1333C9 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Corsair CMX4GX3M1A1333C9 4GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Overall score
star star star star star
Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

Overall score
star star star star star
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Differences Specifications Comments

Differences

Corsair CMX4GX3M1A1333C9 4GB Reasons to consider
Corsair CMX4GX3M1A1333C9 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    40 left arrow 71
    Around 44% lower latency
  • Faster write speed, GB/s
    7.0 left arrow 6.4
    Average value in the tests
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
  • Faster reading speed, GB/s
    15.6 left arrow 12.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 10600
    Around 2.01 higher bandwidth

Specifications

Complete list of technical specifications
Corsair CMX4GX3M1A1333C9 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    40 left arrow 71
  • Read speed, GB/s
    12.8 left arrow 15.6
  • Write speed, GB/s
    7.0 left arrow 6.4
  • Memory bandwidth, mbps
    10600 left arrow 21300
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2021 left arrow 1650

Corsair CMX4GX3M1A1333C9 4GB RAM comparisons

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Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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