RAM comparison Corsair CMX4GX3M1A1333C9 4GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Corsair CMX4GX3M1A1333C9 4GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Overall score

Corsair CMX4GX3M1A1333C9 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Corsair CMX4GX3M1A1333C9 4GB

Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Faster reading speed, GB/s

15.6 12.8

Average value in the tests
Higher memory bandwidth, mbps

21300 10600

Around 2.01 higher bandwidth

Complete list of technical specifications

Corsair CMX4GX3M1A1333C9 4GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2021 1650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns