RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Corsair CMY8GX3M2A2666C10 4GB
Gloway International (HK) STKD4GAM2400-F 8GB
Compare
Corsair CMY8GX3M2A2666C10 4GB vs Gloway International (HK) STKD4GAM2400-F 8GB
Overall score
Corsair CMY8GX3M2A2666C10 4GB
Overall score
Gloway International (HK) STKD4GAM2400-F 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CMY8GX3M2A2666C10 4GB
Report a bug
Below the latency in the PassMark tests, ns
17
83
Around 80% lower latency
Faster reading speed, GB/s
22.8
14.3
Average value in the tests
Faster write speed, GB/s
15.4
7.8
Average value in the tests
Reasons to consider
Gloway International (HK) STKD4GAM2400-F 8GB
Report a bug
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CMY8GX3M2A2666C10 4GB
Gloway International (HK) STKD4GAM2400-F 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
17
83
Read speed, GB/s
22.8
14.3
Write speed, GB/s
15.4
7.8
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
3391
1752
Corsair CMY8GX3M2A2666C10 4GB RAM comparisons
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Gloway International (HK) STKD4GAM2400-F 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK64GX5M2B5200C40 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BL16G30C15U4B.M16FE1 16GB
Corsair CMY8GX3M2A2666C10 4GB
Gloway International (HK) STKD4GAM2400-F 8GB
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C
Patriot Memory (PDP Systems) PSD48G320081 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK16GX4M4A2133C13 4GB
Samsung M378B5673EH1-CF8 2GB
Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-3000C14-16GVRD 16GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
Hexon Technology Pte Ltd HEXON 1GB
Super Talent F24EB8GS 8GB
Samsung M378A1G43DB0-CPB 8GB
Apacer Technology 78.C2GF2.AU00B 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Corsair CMH32GX4M2Z3600C18 16GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
A-DATA Technology ADOVE1A0834E 1GB
Essencore Limited KD48GU880-26N160T 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Report a bug
×
Bug description
Source link