RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Compare
Crucial Technology BLS8G3N18AES4.16FE 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Overall score
Crucial Technology BLS8G3N18AES4.16FE 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology BLS8G3N18AES4.16FE 8GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
42
Around -83% lower latency
Faster reading speed, GB/s
17.5
13.2
Average value in the tests
Faster write speed, GB/s
14.6
9.4
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
23
Read speed, GB/s
13.2
17.5
Write speed, GB/s
9.4
14.6
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2326
3260
Crucial Technology BLS8G3N18AES4.16FE 8GB RAM comparisons
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5403-036.A00G 4GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Samsung M393B2G70BH0-CK0 16GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
Team Group Inc. UD5-6400 16GB
G Skill Intl F4-4000C19-4GVK 4GB
AMD AE34G1601U1 4GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology BL16G32C16U4B.16FE 16GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Samsung M471B1G73QH0-YK0 8GB
Samsung M471A2K43DB1-CTD 16GB
Kingston 99U5584-007.A00LF 4GB
Transcend Information JM3200HLG-8G 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
Corsair CMSX4GX3M1A1600C9 4GB
Apacer Technology 78.B1GM3.AF00B 4GB
Samsung M393B2G70BH0-CK0 16GB
SK Hynix HMA81GS6AFR8N-VK 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston 99U5663-001.A00G 16GB
Report a bug
×
Bug description
Source link