Crucial Technology CT25664BA1339.M8FK 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Crucial Technology CT25664BA1339.M8FK 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Overall score
star star star star star
Crucial Technology CT25664BA1339.M8FK 2GB

Crucial Technology CT25664BA1339.M8FK 2GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Differences

  • Below the latency in the PassMark tests, ns
    26 left arrow 56
    Around 54% lower latency
  • Faster reading speed, GB/s
    20.1 left arrow 13.6
    Average value in the tests
  • Faster write speed, GB/s
    10.5 left arrow 7.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Crucial Technology CT25664BA1339.M8FK 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    26 left arrow 56
  • Read speed, GB/s
    13.6 left arrow 20.1
  • Write speed, GB/s
    7.6 left arrow 10.5
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1916 left arrow 2455
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons