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Crucial Technology CT25664BA160B.C16F 2GB
Samsung V-GeN D4S8GL32A8TL 8GB
Compare
Crucial Technology CT25664BA160B.C16F 2GB vs Samsung V-GeN D4S8GL32A8TL 8GB
Overall score
Crucial Technology CT25664BA160B.C16F 2GB
Overall score
Samsung V-GeN D4S8GL32A8TL 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT25664BA160B.C16F 2GB
Report a bug
Below the latency in the PassMark tests, ns
29
64
Around 55% lower latency
Faster write speed, GB/s
10.1
8.3
Average value in the tests
Reasons to consider
Samsung V-GeN D4S8GL32A8TL 8GB
Report a bug
Faster reading speed, GB/s
16.8
14.3
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT25664BA160B.C16F 2GB
Samsung V-GeN D4S8GL32A8TL 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
64
Read speed, GB/s
14.3
16.8
Write speed, GB/s
10.1
8.3
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2227
2052
Crucial Technology CT25664BA160B.C16F 2GB RAM comparisons
Samsung M378B5773DH0-CH9 2GB
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Samsung V-GeN D4S8GL32A8TL 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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