RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BA1339.D16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Compare
Crucial Technology CT51264BA1339.D16F 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Overall score
Crucial Technology CT51264BA1339.D16F 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BA1339.D16F 4GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
39
Around -50% lower latency
Faster reading speed, GB/s
16.8
13.2
Average value in the tests
Faster write speed, GB/s
13.5
8.2
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BA1339.D16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
39
26
Read speed, GB/s
13.2
16.8
Write speed, GB/s
8.2
13.5
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2165
2880
Crucial Technology CT51264BA1339.D16F 4GB RAM comparisons
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT25664BA160B.C8FE 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB RAM comparisons
Kingston KN2M64-ETB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung V-GeN D4S8GL32A8TL 8GB
Corsair CMV4GX3M1B1600C11 4GB
Crucial Technology CT8G4SFS632A.M4FE 8GB
Kingston 9905403-444.A00LF 4GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Avant Technology J641GU48J5213NG 8GB
Crucial Technology CT102464BF160B.C16 8GB
Corsair CMK16GX4M2Z4000C18 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMD16GX4M4B3400C16 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C17-16GIS 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Kingston 9905712-048.A00G 16GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
A-DATA Technology DDR3 1600 4GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
Samsung M471B5173QH0-YK0 4GB
Team Group Inc. TEAMGROUP-lnd-2133 8GB
Report a bug
×
Bug description
Source link