RAM comparison Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB vs Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB vs Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Overall score

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Below the latency in the PassMark tests, ns

26 28

Around 7% lower latency
Higher memory bandwidth, mbps

21300 17000

Around 1.25% higher bandwidth

Reasons to consider
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Main characteristics

Other

Description

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2880 3601

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns