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Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB vs Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Overall score
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
28
Around 7% lower latency
Higher memory bandwidth, mbps
21300
17000
Around 1.25% higher bandwidth
Reasons to consider
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Report a bug
Faster reading speed, GB/s
18.5
16.8
Average value in the tests
Faster write speed, GB/s
15.7
13.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
26
28
Read speed, GB/s
16.8
18.5
Write speed, GB/s
13.5
15.7
Memory bandwidth, mbps
21300
17000
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2880
3601
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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