RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F2-8500CL5-2GBPI 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
G Skill Intl F2-8500CL5-2GBPI 2GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
G Skill Intl F2-8500CL5-2GBPI 2GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F2-8500CL5-2GBPI 2GB
Report a bug
Below the latency in the PassMark tests, ns
45
71
Around 37% lower latency
Faster reading speed, GB/s
6
15.6
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Faster write speed, GB/s
6.4
2,935.8
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F2-8500CL5-2GBPI 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
45
71
Read speed, GB/s
6,336.8
15.6
Write speed, GB/s
2,935.8
6.4
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1144
1650
G Skill Intl F2-8500CL5-2GBPI 2GB RAM comparisons
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Samsung M393B2G70BH0-CK0 16GB
A-DATA Technology AD5U480016G-B 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Kingston KHX2800C14D4/8GX 8GB
Golden Empire CL16-16-16 D4-3000 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3200C14-16GVR 16GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-3200C14-16GTZSW 16GB
Kingston 9905403-061.A00LF 2GB
Corsair CMK16GX4M2K3600C19 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Mushkin MR[A/B]4U320LLLM16G 16GB
Hexon Technology Pte Ltd HEXON 1GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
Samsung M393B2G70BH0-CK0 16GB
Hewlett-Packard 7EH64AA# 8GB
Samsung M3 78T5663RZ3-CF7 2GB
G Skill Intl F4-2400C15-8GVB 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
Kingston 9905474-019.A00LF 2GB
Panram International Corporation W4N2666PS-16G 16GB
Report a bug
×
Bug description
Source link