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G Skill Intl F3-2800C12-8GTXDG 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Compare
G Skill Intl F3-2800C12-8GTXDG 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Overall score
G Skill Intl F3-2800C12-8GTXDG 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-2800C12-8GTXDG 8GB
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Below the latency in the PassMark tests, ns
21
27
Around 22% lower latency
Faster reading speed, GB/s
17.4
15.3
Average value in the tests
Faster write speed, GB/s
12.2
11.2
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Report a bug
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-2800C12-8GTXDG 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
21
27
Read speed, GB/s
17.4
15.3
Write speed, GB/s
12.2
11.2
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
3130
2545
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RAM Latency Calculator
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