RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Micron Technology 9ASF1G72PZ-2G6D1 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
31
Around 10% lower latency
Faster reading speed, GB/s
12.4
11
Average value in the tests
Faster write speed, GB/s
9.6
8.4
Average value in the tests
Reasons to consider
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Report a bug
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
31
Read speed, GB/s
12.4
11.0
Write speed, GB/s
9.6
8.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2329
2271
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB RAM comparisons
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Micron Technology 9ASF1G72PZ-2G6D1 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
AMD AE34G2139U2 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
Kingston K531R8-MIN 4GB
Kingston CBD24D4S7D8MA-16 16GB
Kingston 99U5584-005.A00LF 4GB
G Skill Intl F4-3600C18-16GTRS 16GB
Kingston ACR16D3LS1NGG/4G 4GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Neo Forza NMUD480E86-3200 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology BLS8G4D240FSC.16FBD2 8GB
Kingston 99U5428-101.A00LF 8GB
G Skill Intl F4-2666C18-32GRS 32GB
Samsung M3 78T6553CZ3-CE6 512MB
G Skill Intl F4-2133C15-8GRR2 8GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9905625-142.A00G 16GB
Kingston 9905403-011.A03LF 2GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-2400C16-8GFX 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA82GR7JJR8N-VK 16GB
Report a bug
×
Bug description
Source link