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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 31
    Around 10% lower latency
  • Faster write speed, GB/s
    9.6 left arrow 9.4
    Average value in the tests
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Report a bug
  • Faster reading speed, GB/s
    12.5 left arrow 12.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 31
  • Read speed, GB/s
    12.4 left arrow 12.5
  • Write speed, GB/s
    9.6 left arrow 9.4
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2329 left arrow 2361

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons

Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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