RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Overall score
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Reasons to consider
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Report a bug
Below the latency in the PassMark tests, ns
34
62
Around -82% lower latency
Faster reading speed, GB/s
17.3
7.4
Average value in the tests
Faster write speed, GB/s
14.5
5.9
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
62
34
Read speed, GB/s
7.4
17.3
Write speed, GB/s
5.9
14.5
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1612
3606
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM comparisons
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BD1339.M16F 4GB
Kingston KHX4266C19D4/8GX 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Chun Well Technology Holding Limited CL18-22-22 D4-3600
Apacer Technology 78.01G86.9H50C 1GB
SK Hynix GKE800UD102408-2400 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
A-DATA Technology DDR4 2800 8GB
Kingston 9965433-034.A00LF 4GB
V-GEN D4H8GS24A8 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Crucial Technology CT102464BF160B-16F 8GB
Super Talent F26UB16GH 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3600C14-16GTZRA 16GB
Crucial Technology CT102464BF160B.C16 8GB
Apacer Technology 78.C1GMM.DFW0C 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3200C16-8GTZKO 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BLT8G4D26AFTA.16FBD 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3600C16-8GTZ 8GB
Report a bug
×
Bug description
Source link