RAM
DDR5
DDR4
DDR3
DDR2
このサイトについて
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
このサイトについて
ja
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

総合得点
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

総合得点
star star star star star
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

相違点 仕様 コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB 考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
バグを報告する
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB 考慮すべき理由
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
バグを報告する
  • PassMarkテストでのレイテンシー以下、ns
    34 left arrow 62
    周辺 -82% 低遅延
  • 読み出し速度の高速化、GB/s
    17.3 left arrow 7.4
    テスト平均値
  • 書き込み速度の高速化、GB/s
    14.5 left arrow 5.9
    テスト平均値
  • より高いメモリ帯域幅、mbps
    17000 left arrow 10600
    周辺 1.6 高帯域

仕様

技術仕様の完全リスト
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
主な特徴
  • メモリータイプ
    DDR3 left arrow DDR4
  • PassMarkにおけるレイテンシー、ns
    62 left arrow 34
  • 読み出し速度、GB/s
    7.4 left arrow 17.3
  • 書き込み速度、GB/秒
    5.9 left arrow 14.5
  • メモリ帯域幅、mbps
    10600 left arrow 17000
Other
  • 商品説明
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • タイミング / クロック速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • ランキングPassMark（多ければ多いほど良い）
    1612 left arrow 3606

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAMの比較

Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB RAMの比較

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新の比較

Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Panram International Corporation PUD43000C158G2NJK 8GB
Panram International Corporation PUD43000C158G2NJK 8GB
メモリRAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB
Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C
メモリRAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
メモリRAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Apacer Technology 78.BAGMD.AF20B 4GB
Apacer Technology 78.BAGMD.AF20B 4GB
メモリRAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
メモリRAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
メモリRAM
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Kingston 9965589-013.A00G 8GB
Kingston 9965589-013.A00G 8GB
メモリRAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
メモリRAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
メモリRAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
メモリRAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Avant Technology W6451U67J5213NB 4GB
Avant Technology W6451U67J5213NB 4GB
メモリRAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
メモリRAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
メモリRAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Kingston 9965589-005.A01G 8GB
Kingston 9965589-005.A01G 8GB
メモリRAM