RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Micron Technology 16ATF1G64HZ-2G1A2 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Overall score
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Reasons to consider
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Report a bug
Below the latency in the PassMark tests, ns
38
62
Around -63% lower latency
Faster reading speed, GB/s
13.9
7.4
Average value in the tests
Faster write speed, GB/s
10.5
5.9
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
62
38
Read speed, GB/s
7.4
13.9
Write speed, GB/s
5.9
10.5
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1612
2400
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM comparisons
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Hexon Technology Pte Ltd HEXON 1GB
Teikon TMA81GU6AFR8N-UHSC 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
Avant Technology F6451U64F9333G 4GB
INTENSO 4GB
Kingston 9905584-016.A00LF 4GB
Kingston 16ATF2G64AZ-2G1B1 8GB
Kingston KF552C40-16 16GB
Samsung M391A2K43BB1-CPB 16GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CB8GS2666.C8ET 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Samsung M378A1G43DB0-CPB 8GB
Team Group Inc. ZEUS-2133 8GB
G Skill Intl F4-2800C17-8GIS 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Kingston 9905700-011.A00G 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMW32GX4M4C3200C14 8GB
A-DATA Technology DDR4 2400 16GB
Samsung M378A2K43BB1-CRC 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Mushkin 99[2/7/4]183 8GB
Report a bug
×
Bug description
Source link