RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs A-DATA Technology AO1P32NCSV1-BEWS 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
A-DATA Technology AO1P32NCSV1-BEWS 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
60
Around 60% lower latency
Faster reading speed, GB/s
16
15
Average value in the tests
Reasons to consider
A-DATA Technology AO1P32NCSV1-BEWS 16GB
Report a bug
Faster write speed, GB/s
12.8
12.5
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
60
Read speed, GB/s
16.0
15.0
Write speed, GB/s
12.5
12.8
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2925
2554
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO1P32NCSV1-BEWS 16GB
Samsung M471B5273DH0-CH9 4GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
AMD R538G1601U2S-UO 8GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston 9905701-018.A00G 16GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9905711-035.A00G 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA82GS6CJR8N-UH 16GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Samsung M474A4G43MB1-CTD 32GB
G Skill Intl F3-2133C9-4GAB 4GB
Mushkin 99[2/7/4]191[F/T] 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston HP24D4U7S1MBP-4 4GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Corsair CMW32GX4M2D3000C16 16GB
Report a bug
×
Bug description
Source link