RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT16G4SFD8213.C16FH1 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology CT16G4SFD8213.C16FH1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
41
Around 41% lower latency
Faster reading speed, GB/s
16
14.9
Average value in the tests
Faster write speed, GB/s
12.5
11.5
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Crucial Technology CT16G4SFD8213.C16FH1 16GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
41
Read speed, GB/s
16.0
14.9
Write speed, GB/s
12.5
11.5
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2686
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMA451U6AFR8N-TF 4GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFD8213.C16FH1 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
Kingston 9905469-143.A00LF 4GB
Kingston 9965589-008.D01G 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-4000C19-16GTZKK 16GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-3000C16-16GTZN 16GB
Kingston 99U5584-004.A00LF 4GB
Kingston 9905598-006.A00G 8GB
Samsung M378A1G43DB0-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
Samsung M393B5170FH0-CH9 4GB
Corsair CMW32GX4M4C3200C16 8GB
Samsung M395T2863QZ4-CF76 1GB
Wilk Elektronik S.A. GR2666S464L19/16G 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905678-007.A00G 8GB
Kingston 99U5469-045.A00LF 4GB
EVGA 16G-D4-2800-MR 4GB
Samsung M3 78T2863QZS-CF7 1GB
Wilk Elektronik S.A. GR2133S464L15/8G 8GB
Report a bug
×
Bug description
Source link